SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL

Abstract: provided is a semiconductor device including a two-dimensional semiconductor material. the semiconductor device includes a first channel including a first two-dimensional material layer, a second channel being apart from the first channel and including a second two-dimensional material layer, a common gate electrode between the first channel and the second channel, a first source electrode and a first drain electrode in contact with the first channel, and a second source electrode and a second drain electrode in contact with the second channel, wherein one of the first channel and the second channel is an n-type channel, and the other is a p-type channel, and the first channel and the second channel are u-shaped.

Inventor(s): Kyung-Eun BYUN, Changhyun KIM, Minsu SEOL, Minseok YOO

CPC Classification: H10D84/856 (No explanation available)

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