SEMICONDUCTOR DEVICE

Abstract: a semiconductor device of the technical idea of the inventive concept includes a first transistor including a first channel region extending in a first direction and a first source/drain region contacting the first channel region, a second transistor including a second channel region on the first transistor and spaced apart from the first transistor in a second direction perpendicular to the first direction and extending in the first direction and a second source/drain region contacting the second channel region, a dummy layer beneath the first transistor, a protective layer beneath the dummy layer and including an indented portion that is indented in the first direction, and a spacer on the indented portion.

Inventor(s): INHAE ZOH, JINBUM KIM, SUK YANG, SOOBIN HAN

CPC Classification: H10D84/856 (No explanation available)

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