SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

Abstract: a semiconductor device includes a first transistor, a second transistor above the first transistor, and an isolation structure. the first transistor includes a first semiconductor channel layer, a first gate structure wrapping around the first semiconductor channel layer, and first source/drain epitaxy structures on opposite ends of the first semiconductor channel layer. the second transistor includes a second semiconductor channel layer, a second gate structure wrapping around the second semiconductor channel layer, and second source/drain epitaxy structures on opposite ends of the second semiconductor channel layer. the isolation structure electrically isolates the first gate structure from the second gate structure, wherein in a top view the isolation structure is adjacent to the second gate structure, and wherein in a first cross-sectional view, the isolation structure wraps around the first semiconductor channel layer.

Inventor(s): Bo-Wei HUANG, Chien-Te TU, Chee-Wee LIU

CPC Classification: H10D84/83 (No explanation available)

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