GROUP III-V IC WITH DIFFERENT SHEET RESISTANCE 2-DEG RESISTORS

Abstract: an integrated circuit (ic) includes a lower group iii-n layer having a first composition over a substrate, and an upper group iii-n layer having a different second composition over the lower group iii-n layer. a gate electrode of a high electron mobility transistor (hemt) is located over the upper group iii-n layer. first and second resistor contacts make a conductive connection to the lower group iii-n layer. an unbiased group iii-n cover layer is located on the upper group iii-n layer in a resistor area including a high rs 2-deg resistor, where the unbiased group iii-n cover layer is positioned between the first and second contacts.

Inventor(s): Dong Seup Lee, Hiroyuki Tomomatsu

CPC Classification: H10D84/811 (No explanation available)

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