SEMICONDUCTOR DEVICE AND METHODS OF FORMING THE SAME

Abstract: an embodiment includes a device including a first semiconductor fin extending over a substrate, a second semiconductor fin extending over the substrate, a hybrid fin over the substrate, the hybrid fin disposed between the first semiconductor fin and the second semiconductor fin, and the hybrid fin having an oxide inner portion extending downward from a top surface of the hybrid fin. the device also includes a first isolation region between the second semiconductor fin, the first semiconductor fin, and the hybrid fin, the hybrid fin extending above a top surface of the first isolation region, a high-k gate dielectric over sidewalls of the hybrid fin, sidewalls of the first semiconductor fin, and sidewalls of the second semiconductor fin, a gate electrode on the high-k gate dielectric, and source/drain regions on the first semiconductor fin on opposing sides of the gate electrode.

Inventor(s): Cheng-I Lin, Da-Yuan Lee, Chi On Chui

CPC Classification: H10D84/038 (No explanation available)

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