20250176248. Titanium Aluminum Tant (ASM IP Holding B.V.)
TITANIUM ALUMINUM AND TANTALUM ALUMINUM THIN FILMS
Abstract: a process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. the deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase ti or ta precursor and a vapor phase al precursor. at least one of the vapor phase ti or ta precursor and the vapor phase al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.
Inventor(s): Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Raisanen, Timo Asikainen, Chiyu Zhu, Jaako Anttila
CPC Classification: H10D64/667 (No explanation available)
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