SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SEMICONDUCTOR DEVICE

Abstract: a semiconductor device includes: a gate structure including a gate dielectric layer, a gate electrode, and a gate capping layer that are sequentially stacked over a substrate; first spacers disposed on both sidewalls of the gate structure; a semiconductor layer disposed between the substrate and the gate structure and having both side surfaces that are aligned with outer surfaces of each first spacers; and second spacers disposed on side surfaces of the semiconductor layer and first spacers.

Inventor(s): Na Hye WON, Sung Soo KIM, Han Nae KIM

CPC Classification: H10D64/021 (No explanation available)

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