METHOD FOR MAKING A DEEP TRENCH ISOLATION BETWEEN HIGH VOLTAGE SEMICONDUCTOR DEVICES

Abstract: a deep trench isolation structure is formed in a semiconductor material body by opening first and second trenches. the sidewalls and bottoms of the first and second trenches are then lined with an insulating material. a halogen-based polymer material is then deposited to cover at least an upper portion of the insulation material in the first trench without covering a portion insulation material at the bottom of the first trench and further cover the insulation material at the sidewalls and bottom of the second trench. an etch process is then used to remove the portion of the insulation material at the bottom of the first trench and the polymer material is removed from both the first trench and second trench. the trenches are then filled with polysilicon to form a substrate plug in the first trench and a field plate electrode in the second trench.

Inventor(s): Salvatore Paolo CALABRO', Pietro PETRUZZA, Marta RAIMONDO

CPC Classification: H10D64/01 (No explanation available)

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