20250176236. Structures Doped Semi (ASM IP Holding B.V.)
STRUCTURES WITH DOPED SEMICONDUCTOR LAYERS AND METHODS AND SYSTEMS FOR FORMING SAME
Abstract: methods and systems for depositing material, such as doped semiconductor material, are disclosed. an exemplary method includes providing a substrate, forming a first doped semiconductor layer overlying the substrate, and forming a second doped semiconductor layer overlying the first doped semiconductor layer, wherein the first doped semiconductor layer comprises a first dopant and a second dopant, and wherein the second doped semiconductor layer comprises the first dopant. structures and devices formed using the methods and systems for performing the methods are also disclosed.
Inventor(s): Lucas Petersen Barbosa Lima, Rami Khazaka, Qi Xie
CPC Classification: H10D62/834 (No explanation available)
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