GATE ELECTRODE STRUCTURE IN MEDIUM VOLTAGE DEVICE FOR SCALING AND INCREASED PERFORMANCE

Abstract: various embodiments of the present disclosure are directed towards an integrated chip including an isolation structure extending into a front-side surface of a substrate. the isolation structure laterally encloses a first device region of the substrate. the isolation structure comprises a pair of isolation edges elongated in a first direction and at least partially defining the first device region. a pair of source/drain regions is disposed within the first device region and laterally spaced from one another in the first direction. a first gate electrode structure is disposed in the first device region between the pair of source/drain regions. the first gate electrode structure comprises a first pair of opposing sidewalls elongated in the first direction. the opposing sidewalls are laterally offset from a corresponding isolation edge in the pair of isolation edges by a non-zero distance in a direction towards a center of the first gate electrode structure.

Inventor(s): Yi-Huan Chen, Yu-Chang Jong, Fei-Yun Chen, Chien-Chih Chou, Chia-Jui Lee

CPC Classification: H10D62/116 (No explanation available)

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