SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND MANUFACTURING METHOD THEREOF

Abstract: provided are a semiconductor device including a two-dimensional material and a manufacturing method thereof. the semiconductor device includes a channel layer containing a two-dimensional semiconductor material, a source electrode and a drain electrode provided on both sides of the channel layer, respectively, a gate insulating layer provided on the channel layer between the source electrode and the drain electrode and including a two-dimensional insulating material, an interlayer provided between the channel layer and the gate insulating layer, and a gate electrode provided on the gate insulating layer.

Inventor(s): Hyeon Cheol PARK, Huije RYU, Kyung-Eun BYUN, Minsu SEOL, Joungeun YOO, Eunkyu LEE, Yeonchoo CHO

CPC Classification: H10D48/362 (No explanation available)

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