SEMICONDUCTOR DEVICE

Abstract: a semiconductor device may include a substrate including an insulating structure, a back-side metal layer below the substrate, a source/drain pattern on the insulating structure, a channel pattern connected to the source/drain pattern and including semiconductor patterns vertically stacked and spaced apart from each other, a gate electrode on the semiconductor patterns, and a back-side gate contact penetrating the substrate and electrically connecting the back-side metal layer to the gate electrode. the gate electrode may include inner electrodes between adjacent ones of the semiconductor patterns and an outer electrode on the uppermost one of the semiconductor patterns. a first surface of the back-side gate contact may be in contact with a bottom surface of the gate electrode, and a second surface of the back-side gate contact may be in contact with a side of the insulating structure. an angle between the first and second surfaces may be an acute angle.

Inventor(s): Jeewoong KIM, Yunsuk NAM, Jaehoon SHIN, Jinkyu KIM, Jaehyun AHN, Darong OH

CPC Classification: H10D30/6757 (No explanation available)

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