20250176222. Oxide Semiconductor Film, T (Japan Display .)
OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, AND ELECTRONIC DEVICE
Abstract: an oxide semiconductor film has a polycrystalline structure. a crystal structure of the oxide semiconductor film is a bixbyite structure. in the oxide semiconductor film, no peak intensity of a (422) plane is observed in an out-of-plane xrd diffraction pattern using cu-k� radiation. a crystallite diameter calculated from a peak of a (222) plane in the xrd diffraction pattern may be greater than or equal to 15 nm.
Inventor(s): Hajime WATAKABE, Masashi TSUBUKU, Toshinari SASAKI, Takaya TAMARU, Daichi SASAKI, Emi KAWASHIMA, Yuki TSURUMA
CPC Classification: H10D30/6755 (No explanation available)
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