LAMINATED STRUCTURE AND THIN FILM TRANSISTOR

Abstract: the laminated structure has a base insulating layer, a metal oxide layer arranged on the base insulating layer, and an oxide semiconductor layer arranged in contact with the metal oxide layer, and the oxide semiconductor layer has a first region in which the same metal element as the metal element contained in the metal oxide layer has the concentration gradient, and the concentration gradient of the metal element increases as it approaches the interface between the metal oxide layer and the oxide semiconductor layer.

Inventor(s): Hajime WATAKABE, Masashi TSUBUKU, Toshinari SASAKI, Takaya TAMARU, Emi KAWASHIMA, Yuki TSURUMA, Daichi SASAKI

CPC Classification: H10D30/6755 (No explanation available)

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