THIN FILM TRANSISTOR AND ELECTRONIC DEVICE

Abstract: a thin film transistor includes a metal oxide layer, an oxide semiconductor layer provided in contact with the metal oxide layer and containing a plurality of crystal grains, a gate electrode provided over the oxide semiconductor layer, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode. the oxide semiconductor layer includes a grain boundary having a crystal orientation difference greater than 5 degrees between two adjacent measurement points obtained by an electron backscatter diffraction (ebsd) method. an average kam value calculated by the ebsd method is greater than or equal to 1.4 degrees.

Inventor(s): Hajime WATAKABE, Masashi TSUBUKU, Toshinari SASAKI, Takaya TAMARU, Emi KAWASHIMA, Yuki TSURUMA, Daichi SASAKI

CPC Classification: H10D30/6755 (No explanation available)

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