20250176218. Vertical Oxide-semiconductor Transistor Method Manufacturing (Powerchip Semiconductor Manufacturing)

VERTICAL OXIDE-SEMICONDUCTOR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Abstract: a vertical oxide-semiconductor transistor is proposed by the present invention, including an insulating substrate, a source in the insulating substrate, a gate on the insulating substrate, wherein the gate surrounds the source and forms a recess on the source, an inner spacer on an inner sidewall of the gate in the recess, an oxide-semiconductor layer on the inner spacer and the source and directly contacts the source, a filling oxide on the oxide-semiconductor layer and filling in the recess, and a drain on the oxide-semiconductor layer and filling oxide and directly connecting with the oxide-semiconductor layer, wherein the drain completely covers the source and partially overlaps the gate.

Inventor(s): Wen-Yueh Chang

CPC Classification: H10D30/6755 (No explanation available)

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