SEMICONDUCTOR DEVICE

Abstract: a semiconductor device includes a semiconductor substrate of a first conductivity type; a well region of the first conductivity type in the semiconductor substrate; and a fin disposed on the semiconductor substrate within the well region. the fin extends along a first direction. the fin includes a first portion and a second portion that is contiguous with the first portion. the first portion includes a counter-doping region having dopants of a second conductivity type. a gate extends over the fin along a second direction. the gate overlaps with the first portion of the fin and does not overlap with the second portion of the fin.

Inventor(s): Wen-Kai Lin, Kuo-Hsing Lee, Guan-Kai Huang, Chih-Kai Kang, Yung-Chen Chiu, Sheng-Yuan Hsueh, Yao-Jhan Wang

CPC Classification: H10D30/62 (No explanation available)

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