SCHOTTKY BARRIER DIODE

Abstract: disclosed herein is a schottky barrier diode that includes a semiconductor substrate and a drift layer, an anode electrode contacting the drift layer, and a cathode electrode contacting the semiconductor substrate. the drift layer has an outer peripheral trench surrounding the anode electrode. the outer peripheral trench includes an inner peripheral wall, an outer peripheral wall, a bottom surface, an inner peripheral corner connecting the inner peripheral wall and the bottom surface, and an outer peripheral corner connecting the outer peripheral wall and the bottom surface. the inner peripheral wall and the inner peripheral corner of the outer peripheral trench are covered with the anode electrode through an insulating film. the outer peripheral corner of the outer peripheral trench is covered with a semiconductor material having a conductivity type opposite to a conductivity type of the drift layer.

Inventor(s): Jun ARIMA, Minoru FUJITA, Katsumi KAWASAKI, Jun HIRABAYASHI

CPC Classification: H10D8/60 (No explanation available)

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