METAL-OXIDE-SEMICONDUCTOR CAPACITOR

Abstract: a mos capacitor includes a substrate of a first conductivity type including a fin surrounded by an isolation region. the fin protrudes from a top surface of the isolation region. a counter-doping region of a second conductivity type is disposed in the fin and serves as a first electrode plate of the mos capacitor. a capacitor dielectric layer covers a sidewall and a top surface of the fin. a metal gate covers the capacitor dielectric layer and serves as a second electrode plate of the mos capacitor.

Inventor(s): Hsin-Hsien Chen, Kuo-Hsing Lee, Chih-Kai Kang, Sheng-Yuan Hsueh

CPC Classification: H10D1/66 (No explanation available)

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