SEMICONDUCTOR DEVICE

Abstract: the semiconductor device includes a signal transmission element provided on an element structure in a high-withstand-voltage isolation region. the signal transmission element includes a primary coil that is provided on a side of a low potential region of the high-withstand-voltage isolation region and connected to the low potential region, and a secondary coil that is provided on a side of a high potential region of the high-withstand-voltage isolation region and connected to the high potential region. the primary coil and the secondary coil are magnetically coupled to each other by a magnetic field in a direction parallel to a main surface of a p type substrate.

Inventor(s): Takuichiro SHITOMI, Manabu YOSHINO, Yasuo YAMAGUCHI, Toshihiro IMASAKA, Atsushi ITO

CPC Classification: H10D1/20 (No explanation available)

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