20250176191. Semiconductor De (SAMSUNG ELECTRONICS ., .)

SEMICONDUCTOR DEVICE

Abstract: a semiconductor device may include a substrate including a cell region, a peripheral region, and a boundary region therebetween, a first lower insulating layer disposed on the cell region and extending onto the boundary region and the peripheral region, a second lower insulating layer disposed on the first lower insulating layer on the cell region and extending onto the first lower insulating layer on the boundary region and the peripheral region, data storage patterns disposed on the second lower insulating layer on the cell region, a cell insulating layer disposed on the second lower insulating layer on the cell region and the boundary region and covering the data storage patterns, a peripheral insulating layer disposed on the second lower insulating layer on the peripheral region and including a material different from that of the cell insulating layer, and a buffer insulating layer disposed on the cell insulating layer on the boundary region.

Inventor(s): Junhoe KIM, YONGJAE KIM, HYUNCHUL SHIN

CPC Classification: H10B61/00 (Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices)

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