SEMICONDUCTOR DEVICE AND MEMORY DEVICE INCLUDING THE SAME

Abstract: provided are a semiconductor device and a memory device including the same. the semiconductor device includes a channel layer, a ferroelectric layer on the channel layer, a charge trap layer on the ferroelectric layer, a barrier modulation layer on the charge trap layer, a tunneling barrier layer on the barrier modulation layer, and a gate electrode on the tunneling barrier layer. the barrier modulation layer is configured to have high electron affinity compared to the tunneling barrier layer and the charge trap layer and to have a low bandgap compared to the tunneling barrier layer and the charge trap layer.

Inventor(s): Sijung YOO, Seunggeol NAM, Woochul LEE, Hyunjae LEE, Dukhyun CHOE, Seokhoon CHOI, Seungdam HYUN

CPC Classification: H10B43/30 (ELECTRONIC MEMORY DEVICES)

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