SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract: a semiconductor memory device includes a contact pad that fills a recess at an upper end of a channel region and is in contact with a contact plug, wherein sidewalls of the contact pad are spaced apart from a back gate dielectric film and a gate dielectric film with the channel region in between at a vertical level lower than a first vertical level at which an uppermost surface of the channel region is positioned.

Inventor(s): Kyeonggyu LEE, Jinbum KIM, Suk YANG, Inhae ZOH, Wonhee CHOI

CPC Classification: H10B12/485 (ELECTRONIC MEMORY DEVICES)

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