SEMICONDUCTOR DEVICE

Abstract: an example semiconductor device includes a stack structure including a plurality of layers stacked on a substrate. each layer includes a bit line structure including a bit line extending in a first direction parallel with the substrate, a bit line connection portion connecting the bit line structure and a wiring layer and extending in a third direction perpendicular to the substrate, a semiconductor pattern electrically connected to the bit line and extending in a second direction intersecting with the first direction, a word line structure including a word line extending in the third direction and a word line protrusion protruding in the first direction from the word line, and a capacitor electrically connected to the semiconductor pattern. the word line faces a first surface of the semiconductor pattern perpendicular to the substrate, and the word line protrusion faces a second surface of the semiconductor pattern parallel with the substrate.

Inventor(s): Dongkyun Lim

CPC Classification: H10B12/485 (ELECTRONIC MEMORY DEVICES)

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