INTEGRATED CIRCUIT DEVICE

Abstract: an integrated circuit device includes a lower electrode above a substrate, a plurality of insulating support patterns supporting the lower electrode and spaced apart from each other in a vertical direction, a plurality of bridge patterns each having a thickness less than a thickness of each of the plurality of insulating support patterns in the vertical direction and respectively interposed between the plurality of insulating support patterns and the lower electrode, a capacitor dielectric layer covering the lower electrode, the plurality of insulating support patterns, and the plurality of bridge patterns, and an upper electrode facing the lower electrode with the capacitor dielectric layer therebetween.

Inventor(s): Jihye Lee, Yangdoo Kim, Sangwuk Park, Minkyu Suh, Geonyeop Lee, Dokeun Lee, Jewoo Han

CPC Classification: H10B12/315 (ELECTRONIC MEMORY DEVICES)

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