SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Abstract: a semiconductor device includes a substrate, an active region in the substrate, and a gate structure in the active region. the gate structure includes a bottom conductive layer, a top conductive layer on the bottom conductive layer, and a cap layer on the top conductive layer. a width of the bottom conductive layer is wider than a width of the top conductive layer, and a width of the cap layer is wider than the width of the top conductive layer. the top conductive layer and the bottom conductive layer are made of a same material. a method of forming the semiconductor device is also disclosed.

Inventor(s): Ying-Cheng CHUANG, Yu-Ting LIN

CPC Classification: H10B12/053 (ELECTRONIC MEMORY DEVICES)

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