20250174595. M (Taiwan Semiconductor Manufacturing ., .)
METHODS AND SYSTEMS FOR IMPROVING FUSION BONDING
Abstract: methods and systems for improving fusion bonding are disclosed. plasma treatment is performed on a substrate prior to the fusion bonding, which leaves residual charge on the substrate to be fusion bonded. the residual charge is usually dissipated through an electrically conductive silicone cushion on a loading pin. in the methods, the amount of residual voltage on a test silicon wafer is measured. if the residual voltage is too high, this indicates the usable lifetime of the silicone cushion has passed, and the electrically conductive silicone cushion is replaced. this ensures the continued dissipation of residual charge during use in production, improving the quality of fusion bonds between substrates.
Inventor(s): Hong-Ta Kuo, Yen-Hao Huang, I-Shi Wang, Ming-Yi Shen, Tzu-Ping Yang, Hsing-Yu Wang, Huang-Liang Lin, Yin-Tung Chou, Yuan-Hsin Chi, Sheng-Yuan Lin
CPC Classification: H01L24/80 ({Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected})
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- Patent Applications
- Taiwan Semiconductor Manufacturing Co., Ltd.
- CPC H01L24/80
- Hong-Ta Kuo of Hsinchu TW
- Yen-Hao Huang of Hsinchu TW
- I-Shi Wang of Taipei TW
- Ming-Yi Shen of Miaoli TW
- Tzu-Ping Yang of Hsinchu TW
- Hsing-Yu Wang of Hsinchu TW
- Huang-Liang Lin of Hsinchu TW
- Yin-Tung Chou of Hsinchu TW
- Yuan-Hsin Chi of Taichung TW
- Sheng-Yuan Lin of Hsinchu TW