MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Abstract: a semiconductor device includes a first transistor formed on a first side of a substrate. the semiconductor device includes a first power rail structure vertically disposed over the first transistor, a second power rail structure vertically disposed over the first power rail structure, and a memory portion vertically disposed over the second power rail structure. the first power rail structure, and a second power rail structure, and the memory portion are all disposed on a second side of the substrate opposite to the first side.

Inventor(s): Chung-Liang Cheng

CPC Classification: H01L23/5286 ({Geometry or} layout of the interconnection structure {( takes precedence; algorithms )})

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