20250174547. Semiconductor Device Met (DENSO)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Abstract: a semiconductor device has a substrate and a capacitor. the capacitor is disposed on one surface of the substrate. the capacitor has two electrodes and a dielectric film arranged between the two electrodes. the substrate has a trench penetrating the substrate within an opposing region of the substrate opposing the capacitor.
Inventor(s): Eisuke BANNO, Yosuke MITANI
CPC Classification: H01L23/5223 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (use of semiconductor devices for measuring ; resistors in general ; magnets, inductors or transformers ; capacitors in general ; electrolytic devices ; batteries or accumulators ; waveguides, resonators or lines of the waveguide type ; line connectors or current collectors ; stimulated-emission devices ; electromechanical resonators ; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers ; electric light sources in general ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components ; use of semiconductor devices in circuits having a particular application, see the subclass for the application))
Search for rejections for patent application number 20250174547