METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR MEMBER

Abstract: a method for thermo-compression bonding (tcb) a bridge die having a tsv to a redistribution layer is disclosed. in this method, a terminal electrode and an upper end of the tsv on the bridge die are covered with a thermosetting resin film (e.g. daf) to form a resin layer which is then cured. a metal collet c that sucks the bridge die is heated, and the heat is transferred to the entire surface of the resin layer while applying pressure, thereby heat-bonding a lower end of the tsv to the wiring electrode of the redistribution layer. according to this method, the amount of heat transferred to a bonded portion between the lower end and the wiring electrode increases the pressure during heat-bonding is applied to the entire surface of the resin layer thermo-compression is performed reliably.

Inventor(s): Goki TOSHIMA, Masaaki TAKEKOSHI, Keiichi HATAKEYAMA

CPC Classification: H01L23/14 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (use of semiconductor devices for measuring ; resistors in general ; magnets, inductors or transformers ; capacitors in general ; electrolytic devices ; batteries or accumulators ; waveguides, resonators or lines of the waveguide type ; line connectors or current collectors ; stimulated-emission devices ; electromechanical resonators ; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers ; electric light sources in general ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components ; use of semiconductor devices in circuits having a particular application, see the subclass for the application))

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