INTERCONNECTION STRUCTURE HAVING AIR GAP

Abstract: an interconnection structure includes a semiconductor substrate, an interlayer dielectric layer that is disposed over the semiconductor substrate, and a metal trench that is formed in the interlayer dielectric layer. the interlayer dielectric layer is formed with an air gap, and the metal trench is disposed over the air gap.

Inventor(s): Shu-Yun KU, Chia-Chen LEE, Wei-Chen CHU, Chia-Tien WU, Hsin-Ping CHEN

CPC Classification: H01L21/7682 (Applying interconnections to be used for carrying current between separate components within a device {comprising conductors and dielectrics})

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