SEMICONDUCTOR MANUFACTURING PROCESS, SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS

Abstract: disclosed are a semiconductor manufacturing process capable of preventing residues from remaining, preventing a pattern from collapsing, controlling selectivity, and optimizing surface roughness, a semiconductor device manufactured through the semiconductor manufacturing process, and a substrate processing apparatus configured to perform the semiconductor manufacturing process. the semiconductor manufacturing process is performed to remove an oxide-nitride-oxide (ono) layer formed on an outer side of a vertical layer in a horizontal space between a substrate and a base layer in a semiconductor pattern.

Inventor(s): Sang Man PARK, Seong Kwang LEE, Yong Hoon SUNG, Hahn Joo YOON, Il Young KIM, Tae Wan KIM, In Hoe KIM, Thomas Jong Wan KWON, CHENGYEH HSU

CPC Classification: H01L21/32136 ({using plasmas})

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