20250174465. Hard Mask, Substrate Pr (Tokyo Electron Limited)

HARD MASK, SUBSTRATE PROCESSING METHOD, AND REMOVAL METHOD FOR HARD MASK

Abstract: a hard mask used for etching a processing target includes an oxide containing one or more of gallium, indium, and zinc. the hard mask that includes the oxide containing one or more of gallium, indium, and zinc is formed on a substrate having the processing target, and is etched into a desired pattern, and the processing target is etched using the hard mask as a mask.

Inventor(s): Xiaolong LI, Hiroki MAEHARA, Shota ISHIBASHI, Toru KITADA

CPC Classification: H01L21/31144 ({using masks})

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