METHOD FOR FORMING SEMICONDUCTOR DEVICE WITH FIN ISOLATION

Abstract: a method includes following steps. a fin strip is formed over a substrate. the fin strip is etched to form a plurality of semiconductor fins and a plurality of protrusions extending lengthwise on a same line. a gate structure is formed over the plurality of semiconductor fins. heights of the plurality of protrusions are lower than heights of the plurality of semiconductor fins. adjacent two of the plurality of semiconductor fins are spaced apart by one of the plurality of protrusions. in a top view, one of the plurality of semiconductor fins has a top-view pattern comprising a first sidewall, a second sidewall opposing the first sidewall, and an end surface extending along a different horizontal direction than the first sidewall and the second sidewall.

Inventor(s): Chang-Yin CHEN, Che-Cheng CHANG, Chih-Han LIN

CPC Classification: H01L21/3081 (using masks (, take precedence))

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