20250174458. Directed Self-assembly Enabl (Intel)
DIRECTED SELF-ASSEMBLY ENABLED PATTERNING OVER METAL LAYERS USING ASSISTING FEATURES
Abstract: described herein are ic devices include patterned conductive layers, such as metal gratings and gate layers, and patterned layers formed over the patterned conductive layers using a directed self-assembly (dsa)-enabled process with dsa assisting features. a patterned conductive layer may have non-uniform features, such as large regions of insulator within a metal grating, or varying gate lengths across a gate layer. the dsa assisting features enable the formation of patterned layers, e.g., layers with different hard mask materials replicating the structure of the conductive layer below, even over non-uniform features.
Inventor(s): Gurpreet Singh, Nityan Labros Nair, Nafees A. Kabir, Eungnak Han, Xuanxuan Chen, Brandon Jay Holybee, Charles Henry Wallace, Paul A. Nyhus, Manish Chandhok, Florian Gstrein, David Nathan Shykind, Thomas Christopher Hoff
CPC Classification: H01L21/0271 ({comprising organic layers})
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- Patent Applications
- Intel Corporation
- CPC H01L21/0271
- Gurpreet Singh of Portland OR US
- Nityan Labros Nair of Portland OR US
- Nafees A. Kabir of Hillsboro OR US
- Eungnak Han of Portland OR US
- Xuanxuan Chen of Hillsboro OR US
- Brandon Jay Holybee of Portland OR US
- Charles Henry Wallace of Portland OR US
- Paul A. Nyhus of Portland OR US
- Manish Chandhok of Beaverton OR US
- Florian Gstrein of Portland OR US
- David Nathan Shykind of Buxton OR US
- Thomas Christopher Hoff of Hillsboro OR US