20250174443. Substrate Proces (SAMSUNG ELECTRONICS ., .)
SUBSTRATE PROCESSING APPARATUS
Abstract: a substrate processing apparatus includes a chamber, a support member inside the chamber and configured to support a substrate, a plasma excitation member configured to allow energy for excitation of a plasma to be applied, and a baffle provided around an outer circumference of the support member, where the baffle includes an exhaust control member having a ring structure and including an exhaust portion and a plurality of discharge holes in the exhaust portion, where a thickness of the exhaust portion is about 7 mm or less and widths of the plurality of discharge holes are about 2 mm or more.
Inventor(s): Seungbin Ahn, Kyunghyun Kim, Tae-Hyun Kim, Sang Ki Nam, Kuihyun Yoon, Sungho Jang, Hyungkyu Choi, Jungmin Ko, Kwonsang Seo, Jungmo Yang, Seulgi Lee
CPC Classification: H01J37/32834 (Gas-filled discharge tubes (heating by discharge ))
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- Patent Applications
- SAMSUNG ELECTRONICS CO., LTD.
- CPC H01J37/32834
- Seungbin Ahn of Suwon-si KR
- Kyunghyun Kim of Suwon-si KR
- Tae-Hyun Kim of Suwon-si KR
- Sang Ki Nam of Suwon-si KR
- Kuihyun Yoon of Suwon-si KR
- Sungho Jang of Suwon-si KR
- Hyungkyu Choi of Suwon-si KR
- Jungmin Ko of Suwon-si KR
- Kwonsang Seo of Suwon-si KR
- Jungmo Yang of Suwon-si KR
- Seulgi Lee of Suwon-si KR