SUBSTRATE SUPPORT AND PLASMA PROCESSING APPARATUS

Abstract: a substrate support includes a first layer, and a second layer disposed on the first layer, including a substrate supporting surface and at least one adsorption electrode, and made of a dielectric material having a volume resistance value higher than a volume resistance value of the first layer. the first layer includes a first region in contact with the second layer and having a first thermal conductivity, a second region having a second thermal conductivity higher than the first thermal conductivity and configured such that the first region is disposed between the second region and the second layer, and a transition region disposed between the first region and the second region and having a thermal conductivity that shifts between the first thermal conductivity and the second thermal conductivity to approach the second thermal conductivity according to an increase in distance from the first region.

Inventor(s): Yasuhisa KUDO, Atsushi KAWABATA

CPC Classification: H01J37/32724 (Gas-filled discharge tubes (heating by discharge ))

Search for rejections for patent application number 20250174442