PLASMA PROCESSING APPARATUS AND POWER SUPPLY SYSTEM

Abstract: a plasma processing apparatus includes: an rf power supply that supplies an rf signal having a first power level during a first state and a second state in a first repetition period, a second power level during a third state in the first repetition period, and a third power level during a fourth state in the first repetition period, the second power level being less than the first power level, the third power level being less than the second power level; and a voltage pulse generator that applies a voltage pulse signal having a first voltage level during the first state in the first repetition period, and a sequence of voltage pulses having a second voltage level during the second state in the first repetition period, an absolute value of the second voltage level being greater than an absolute value of the first voltage level.

Inventor(s): Kota SHIHOMMATSU, Lifu LI, Hiroshi TSUJIMOTO, Daichi MIZUKAMI, Jun ABE, Hideo KATO

CPC Classification: H01J37/32146 (Gas-filled discharge tubes (heating by discharge ))

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