MEMORY DEVICE AND PROGRAM OPERATION THEREOF

Abstract: in certain aspects, a memory device includes memory strings each including a drain select gate (dsg) transistor, memory cells, and a source select gate (ssg) transistor, and a peripheral circuit coupled to the memory strings. the peripheral circuit is configured to, in a program operation, program a select memory cell of the memory cells in a select memory string of the memory strings, and inhibit an unselect memory cell of the memory cells in an unselect memory string of the memory strings. the peripheral circuit includes a word line driver configured to in a pre-pulse period and a post-pulse period in a first loop of the program operation, turn off the dsg transistor in the unselect memory string, and in at least one of a pre-pulse period or a post-pulse period in a second loop of the program operation after the first loop, turn on the dsg transistor in the unselect memory string.

Inventor(s): Yuanyuan Min, Kaikai You, Ying Cui, Jianquan Jia, Xiangnan Zhao

CPC Classification: G11C16/10 (Programming or data input circuits)

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