MEMORY, OPERATION METHOD THEREOF, AND MEMORY SYSTEM

Abstract: examples of the present disclosure provide a memory, an operation method thereof, and a memory system. the memory comprises a memory cell array and a peripheral circuit coupled to the memory cell array, wherein the memory cell array comprises a plurality of word lines. the operation method comprises: applying a precharge voltage to a selected word line of the plurality of word lines at a first moment; changing a voltage applied to a non-selected word line adjacent to the selected word line from a first voltage to a second voltage at a second moment before the first moment, wherein the first voltage is greater than the second voltage; and applying a voltage pulse to the selected word line at a third moment before the first moment.

Inventor(s): Danyang LI, Yu WANG, ZhiChao DU

CPC Classification: G06F12/0223 ({User address space allocation, e.g. contiguous or non contiguous base addressing})

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