STRESS CONTROL METHOD FOR PHYSICAL VAPOR DEPOSITION OF ALUMINUM

Abstract: provided are methods of reducing the stress of a semiconductor wafer. the method includes exposing depositing an aluminum layer on a top surface of a substrate; and cooling the substrate to a temperature of less than or equal to 20� c., or less than or equal to 10� c., or less than or equal to 0� c., or less than or equal to −20� c. in some embodiments, the method is conducted within a processing tool, e.g., a cluster tool.

Inventor(s): Yaoying Zhong, Haomin Xu, Siew Kit Hoi, Jay Min Soh, Xiao Tan, Li Ying Choo

CPC Classification: C23C14/14 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion ; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. , ; metallising of glass ; metallising mortars, concrete, artificial stone, ceramics or natural stone ; enamelling of, or applying a vitreous layer to, metals ; treating metal surfaces or coating of metals by electrolysis or electrophoresis ; single-crystal film growth ; by metallising textiles ; decorating textiles by locally metallising ))

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