Stable Chemical Mechanical Planarization Polishing Compositions And Methods For High Rate Silicon Oxide Removal

Abstract: the present chemical mechanical planarization (cmp) polishing compositions, methods, and systems have low conductivity, high stability, and offer high removal rates of silicon dioxide for achieving a topographically corrected wafer surface with low defects. the cmp polishing compositions use a unique combination of silica particles, and an amino acid having at least one carboxyl group, preferably at least one amino group —nh, and preferably at least one imidazole group, and a silicate.

Inventor(s): Maitland Graham, Lu Gan, Ramon Bernasconi, Maxwell Warneke

CPC Classification: C09G1/02 (POLISHING COMPOSITIONS (French polish ); SKI WAXES)

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