SEMICONDUCTOR STRUCTURE AND OPERATING METHOD THEREOF

Abstract: a semiconductor structure includes a gate, a channel structure, a gate insulating layer, a source, and a drain. the channel structure includes a threshold switching material, in which the channel structure includes a layered channel, a columnar channel, or a plurality of nanosheet channels. the gate insulating layer is disposed between the gate and the channel structure. the source is in direct contact with the channel structure. the drain is in direct contact with the channel structure.

Inventor(s): Feng-Min LEE, Yu-Yu LIN, Po-Hao TSENG, Ming-Hsiu LEE

CPC Classification: H10N70/253 ()

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