FLIP-CHIP LIGHT-EMITTING DIODE

Abstract: a flip-chip light-emitting diode includes an epitaxial structure including a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on one another in such order. the epitaxial structure is formed with first holes and second holes respectively at a first region and a second region that are independent from each other. each of the first and second holes extends through the second semiconductor layer and the active layer, and partially exposes the first semiconductor layer. a surface of the first semiconductor layer exposed by the first holes has a total area greater than a total area of a surface of the first semiconductor layer exposed by the second holes.

Inventor(s): Sihe Chen, Yu-Chieh Huang, Yashu Zang, Tao Han, Chunhsien Lee, Chimeng Lu, Jianbin Chen

CPC Classification: H10H20/857 (No explanation available)

Search for rejections for patent application number 20250169259