DEEP UV LIGHT EMITTING DIODE

Abstract: a deep uv light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. the mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.

Inventor(s): Tae Gyun KIM, Kyu Ho LEE

CPC Classification: H10H20/8312 (No explanation available)

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