SOLID-STATE IMAGING DEVICE

Abstract: a solid-state imaging device includes: a first pixel including a first photoelectric conversion element that is disposed on a side of a first surface of a base and converts light into electric charge, the side of the first surface being a light incident side; a second pixel being adjacent to the first pixel, and including a second photoelectric conversion element that is disposed on the side of the first surface of the base and converts light into electric charge; a first transistor disposed at a position corresponding to the first pixel on a side of a second surface of the base, the first transistor including a pair of main electrodes; a second transistor disposed at a position corresponding to the second pixel on the side of the second surface of the base, the second transistor including a pair of main electrodes; a pixel separation region disposed between the first pixel and the second pixel; and a shared coupling section having one end electrically coupled directly to one of the main electrodes of the first transistor, and another end electrically coupled, across the pixel separation region, directly to one of the main electrodes of the second transistor.

Inventor(s): HIROSHI TAKAHASHI, YOSHIAKI KITANO

CPC Classification: H10F39/813 (No explanation available)

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