IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

Abstract: disclosed are image sensors and their fabrication methods. the image sensor comprises a semiconductor substrate having a first conductivity type and including a first surface and a second surface opposite to each other, a plurality of photoelectric conversion regions in the semiconductor substrate and having a second conductivity type, and a first pixel isolation structure between the photoelectric conversion regions that are adjacent to each other in a first direction. the first pixel isolation structure includes a first conductive pattern adjacent to the semiconductor substrate and having a shape that extends from the first surface to the second surface, an inner dielectric pattern on an inner lateral surface of the first conductive pattern, a buried dielectric pattern on the inner dielectric pattern, and an etch stop layer between the inner dielectric pattern and the buried dielectric pattern.

Inventor(s): Kook Tae KIM, Seunghwi YOO, Jingyun KIM

CPC Classification: H10F39/807 (No explanation available)

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