IMAGE SENSING DEVICE

Abstract: an image sensing device includes a first photoelectric conversion element configured to overlap a left region of a first microlens, a second photoelectric conversion element configured to overlap a right region of the first microlens, a first floating diffusion region configured to accumulate photocharges received from at least one of the first photoelectric conversion element and the second photoelectric conversion element, a first transfer gate disposed at a top-left side of the first floating diffusion region and configured to transfer photocharges of the first photoelectric conversion element to the first floating diffusion region, and a second transfer gate disposed at a bottom-right side of the first floating diffusion region and configured to transfer photocharges of the second photoelectric conversion element to the first floating diffusion region.

Inventor(s): Hyun Soo LIM, Hee Dong KIM, Sung Ho CHOI

CPC Classification: H10F39/8027 (No explanation available)

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