SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Abstract: an object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. another object is to provide semiconductor device with low power consumption or a manufacturing method thereof. a light-transmitting conductive layer which functions as a gate electrode, a gate insulating film formed over the light-transmitting conductive layer, a semiconductor layer formed over the light-transmitting conductive layer which functions as the gate electrode with the gate insulating film interposed therebetween, and a light-transmitting conductive layer which is electrically connected to the semiconductor layer and functions as source and drain electrodes are included.

Inventor(s): Hajime KIMURA

CPC Classification: H10D86/60 (No explanation available)

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