SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Abstract: a semiconductor device having a high degree of integration is provided. the semiconductor device includes a first and a second transistor, and an insulating layer. the first transistor includes a source electrode, a drain electrode over the insulating layer over the source electrode, a first semiconductor layer in contact with a top surface of the source electrode, an inner wall of an opening provided in the insulating layer, and a top surface of the drain electrode, a first gate insulating layer in contact with a top surface and a side surface of the first semiconductor layer, and a first gate electrode over the first gate insulating layer that includes a region overlapping with the inner wall of the opening. the second transistor includes a second semiconductor layer over the insulating layer, the source electrode in contact with one of a top surface and a side surface of the second semiconductor layer, the drain electrode in contact with the other of the top surface and the side surface of the second semiconductor layer, a second gate insulating layer in contact with the top surface of the second semiconductor layer, a top surface and a side surface of the source electrode, and a top surface and a side surface of the drain electrode, and a second gate electrode over the second gate insulating layer. the first semiconductor layer is in contact with the second gate electrode.

Inventor(s): Yasuharu HOSAKA, Masami JINTYOU, Takahiro IGUCHI, Chieko MISAWA, Ami SATO, Masayoshi DOBASHI

CPC Classification: H10D86/471 (No explanation available)

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